APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 1-6 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) these devices are se nsitive to electrostatic discharge. proper handling procedures should be follo wed. see application note apt0502 on www.microsemi.com q3 q4 1 2 9 q2 q1 6 4 11 8 10 12 cr2 cr1 3 7 5 ntc cr4 cr3 pins 3/4 must be shorted together symbol parameter max ratings unit v ces collector - emitter voltage 650 v i c continuous collector current t c = 25c 100 a t c = 60c 75 i cm pulsed collector current t c = 25c 200 v ge gate C emitter voltage 20 v p d maximum power dissipation 250 w rbsoa reverse bias safe operating area t j = 150c 150a @ 600v application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? high speed trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - rbsoa and scsoa rated ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant full bridge high speed trench + field stop igbt4 power module v ces = 650v i c = 75a @ tc = 60c downloaded from: http:///
APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 650v 100 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 25c 1.85 2.3 v t j = 150c 2.2 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1.2 ma 4.2 5.1 5.6 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 200 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 4620 pf c oes output capacitance 160 c res reverse transfer capacitance 137 q g gate charge v ge = 15v, i c = 75a v ce = 480v 440 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 400v i c = 75a r g = 5 19 ns t r rise time 33 t d(off) turn-off delay time 197 t f fall time 21 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 400v i c = 75a r g = 5 19 ns t r rise time 29 t d(off) turn-off delay time 227 t f fall time 22 e on turn on energy v ge = 15v v bus = 400v i c = 75a r g = 5 t j = 25c 1.5 mj t j = 150c 1.8 e off turn off energy t j = 25c 1.25 t j = 150c 1.4 i sc short circuit data v ge 15v ; v bus = 400v t p 5s ; t j = 150c 500 a r thjc junction to case thermal resistance 0.6 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 650 v i rm reverse leakage current v r = 650v 100 a i f dc forward current tc = 25c 75 a v f diode forward voltage i f = 75a v ge = 0v t j = 25c 1.6 2 v t j = 150c 1.5 t rr reverse recovery time i f = 75a v r = 400v di/dt =2000a/s t j = 25c 100 ns t j = 150c 150 q rr reverse recovery charge t j = 25c 3.6 c t j = 150c 7.6 e rr reverse recovery energy t j = 25c 0.85 mj t j = 150c 1.8 r thjc junction to case thermal resistance 0.98 c/w downloaded from: http:///
APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n. m wt package weight 80 g package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 4-6 typical performance curve hard switching zcs zvs 0 100 200 300 400 0 2 04 06 08 0 fmax, operating frequency (khz) i c (a) v ce =400v d=50% r g =5 ? t j =1 50 c t c =85 c operating frequency vs collector current t j =2 5 c t j =1 50 c 0 50 100 150 0.4 0.8 1.2 1.6 2 i f , forward current (a) v f , anode to cathode voltage (v) forward current vs forward voltage d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maximum effective transient thermal impedance, junction to case vs pulse duration diode downloaded from: http:///
APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 5-6 t j =25c t j =150c 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =17v v ge =9v 0 25 50 75 100 125 150 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 25 50 75 100 125 150 567891 0 i c (a) v ge (v) transfert characteristics eon eoff err 0 1 2 3 4 5 6 0 25 50 75 100 125 150 e (mj) i c (a) energy losses vs collector current v ce = 400v v ge = 15v r g = 5 ? t j = 150 c eon eoff err 0 1 2 3 4 2.5 5 7.5 10 12.5 15 e (mj) gate resistance (ohms) v ce = 400v v ge =15v i c = 75a t j = 150 c switching energy losses vs gate resistance 0 50 100 150 200 0 100 200 300 400 500 600 700 i c (a) v ce (v) reverse bias safe operating area v ge = 15v t j = 150 c r g = 5 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maximum effective transient thermal impedance, junction to case vs pulse durat ion igbt downloaded from: http:///
APTGLQ75H65T1G APTGLQ75H65T1G C rev 1 december 2014 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with lif e- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaim s any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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